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Proceedings Paper

Femtosecond Transients And Nonlinear Optical Effects In CdSe[sub]x[/sub]S[sub]1-x[/sub] Glasses
Author(s): N. Peyghambarian
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Paper Abstract

Glasses doped with CdSexS1-x microcrystallites have attracted much attention recently. Semiconductor doped glasses are interesting both because of device applications as well as fundamental physics. Room-temperature capability, relatively large optical nonlinearity (n2 ≈ 10-8 - 10-9 cm2/kW) , wavelength tunability (which is obtained by changing the composition x which changes the semiconductor bandedge and thus provides wavelength tunability) , rapid response time (≈10 ps) , ease and inexpensiveness of the fabrication make these materials suitable for guided-wave device application . The physics of quantum confinement effects in all three dimensions makes these materials particulary attractive from the fundamental understanding point of view . In order to observe quantum confinement effects, the crystallite sizes have to be small, with (f uniform size distribution. Commercially available glases have an average diameter of ≈120 Å with a FWHM size distribution of ≈50 Å. Therefore, quantum confinement effects are usually absent in commercial glasses . However, a more uniform size distribution and small crystal diameters can be obtained with careful heat treatment of the glass . Researchers at Corning have been able to fabricate glasses with average crystallite diameter ranging from 30 Å to 80 Å with 24 Å to 44 Å FWHM size distribution, respectively . Optical absorption, photoluminescence, x-ray diffraction and transmission electron microscopy have been conducted in order to examine microcrystallites as a function of composition and development .

Paper Details

Date Published: 3 August 1987
PDF: 3 pages
Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); doi: 10.1117/12.940876
Show Author Affiliations
N. Peyghambarian, University of Arizona (United States)

Published in SPIE Proceedings Vol. 0793:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors
Robert R. Alfano, Editor(s)

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