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Proceedings Paper

Picosecond Characterization Of Semiconductor Lasers
Author(s): A. P. DeFonzo
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Paper Abstract

A review of ultrafast techniques of characterizing ultra-high-speed semiconductor lasers is presented. The origin of nonlinear gain effects and their influence on the direct modulation bandwidth is discussed.

Paper Details

Date Published: 3 August 1987
PDF: 7 pages
Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); doi: 10.1117/12.940873
Show Author Affiliations
A. P. DeFonzo, University of Massachusetts (United States)


Published in SPIE Proceedings Vol. 0793:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors
Robert R. Alfano, Editor(s)

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