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Proceedings Paper

Monte Carlo Investigation Of Carrier-Carrier Interaction And Ultrafast Cooling Of Hot Photoexcited Carriers In GaAs
Author(s): M . A . Osman; H. L. Grubin; J. P. Kreskovsky; D. K. Ferry
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Paper Abstract

The role of the electron-electron (e-e), hole-hole (h-h), and electron-hole (e-h) interaction on ultrafast cooling of carriers in GaAs is examined for excess excitation energies of 40, 200, and 300 meV using an Ensemble Monte Carlo (EMC) approach. It is found that when the initial energy of the carrier is below the phonon emission threshold carrier-carrier (c-c) interactions stimulate either the optical phonon emission or absorption process depending on whether the initial energy of the carrier is above or below the thermal energy, respectively. The e-h interaction role is strong when excitation energy is below the LO phonon emission threshold.

Paper Details

Date Published: 3 August 1987
PDF: 8 pages
Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); doi: 10.1117/12.940868
Show Author Affiliations
M . A . Osman, Scientific Research Associates, Inc. (United States)
H. L. Grubin, Scientific Research Associates, Inc. (United States)
J. P. Kreskovsky, Scientific Research Associates, Inc. (United States)
D. K. Ferry, Arizona State University (United States)


Published in SPIE Proceedings Vol. 0793:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors
Robert R. Alfano, Editor(s)

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