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Proceedings Paper

Picosecond Investigations Of High-Density Carrier Dynamics In Alloy Semiconductors
Author(s): Thomas F. Boggess; H. Kalt; K. Bohnert; D. P. Norwood; Arthur L. Smirl; Irnee D'Haenens
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Paper Abstract

We examine the influence of dense electron-hole plasmas on the optical properties of AlxGa1-xAs for a variety of x-values using transient transmission spectroscopy and time-resolved photoluminescence. The measurements provide evidence for band-filling, nonlinear refraction, induced absorption, alloy disorder, and band-gap renormalization. The band gap renormalization is compared to existing theory, and good agreement is obtained by considering the influence of alloy disorder and the separate contributions of exchange and correlation.

Paper Details

Date Published: 3 August 1987
PDF: 12 pages
Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); doi: 10.1117/12.940861
Show Author Affiliations
Thomas F. Boggess, North Texas State University (United States)
H. Kalt, North Texas State University (United States)
K. Bohnert, North Texas State University (United States)
D. P. Norwood, North Texas State University (United States)
Arthur L. Smirl, Hughes Research Laboratories (United States)
Irnee D'Haenens, Hughes Research Laboratories (United States)


Published in SPIE Proceedings Vol. 0793:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors
Robert R. Alfano, Editor(s)

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