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Proceedings Paper

Transient Electronic Energy Relaxation And Excitonic Phenomena In II-VI Compound Semiconductor Superlattices
Author(s): A. V. Nurmikko
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Paper Abstract

The application of time-resolved luminescence techniques is illustrated for two superlattice structures, based on ZnSe/(Zn,Mn)Se and CdTe/ZnTe heteropairs, respectively, In the quantum well limit, both structures share in common strong excitonic character in their recombination spectra at low lattice temperatures. In the (Zn,Mn)Se the Mn-ion d-electron transition provides an alternate path for electronic energy relaxation. More generally, in II-VI strained layer superlattices with small valence band offset we find that excitonic localization phenomena are important and are directly accessible through time-resolved study.

Paper Details

Date Published: 3 August 1987
PDF: 6 pages
Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); doi: 10.1117/12.940858
Show Author Affiliations
A. V. Nurmikko, Brown University (United States)


Published in SPIE Proceedings Vol. 0793:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors
Robert R. Alfano, Editor(s)

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