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Proceedings Paper

Uniaxial Stress As A Probe Of Valence Subband Mixing In Semiconductor Quantum Wells
Author(s): Emil S. Koteles; C. Jagannath; Johnson Lee; M. O. Vassell
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Paper Abstract

We present strong experimental evidence of interactions between light-hole and heavy-hole valence subbands in a GaAs/A1GaAs quantum well subjected to compressive uniaxial stress. The energies of higher order exciton states were determined as a function of stress using low temperature photoluminescence excitation spectra. Level repulsions, which are signatures of valence subband mixing, were observed between a number of light-hole and heavy-hole exciton states. A theoretical model, based on the Luttinger-Kohn and strain Hamiltonians, yielded results in substantial agreement with the experimental data. The cause of the main discrepancy, an anomalously strong level repulsion between the lowest energy light-hole exciton and a parity-allowed "forbidden" exciton, is not yet clear but possible explanations are discussed.

Paper Details

Date Published: 11 August 1987
PDF: 8 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940837
Show Author Affiliations
Emil S. Koteles, GTE Laboratories Incorporated (United States)
C. Jagannath, GTE Laboratories Incorporated (United States)
Johnson Lee, GTE Laboratories Incorporated (United States)
M. O. Vassell, GTE Laboratories Incorporated (United States)


Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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