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Proceedings Paper

Reduction Of Photoluminescence Intensity With Magnetic Field In InGaAs/GaAs Single Strained Layer Quantum Wells
Author(s): M. C. Smith; E. D. Jones; J. E. Schirber; T. J. Drummond; D. Heiman; S. Foner
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Paper Abstract

The photoluminescence intensity of InGaAs/GaAs strained layer single quantum wells with p-type doping was measured as a function of magnetic field. Two different experimental techniques were used, and both show a reduction of intensity with complete suppression occurring at B=35T. Self-consistent potential and energy level calculations indicate complete migration of charge out of the well back to the dopants as a consequence of applied magnetic field.

Paper Details

Date Published: 11 August 1987
PDF: 5 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940829
Show Author Affiliations
M. C. Smith, Sandia National Laboratories (United States)
E. D. Jones, Sandia National Laboratories (United States)
J. E. Schirber, Sandia National Laboratories (United States)
T. J. Drummond, Sandia National Laboratories (United States)
D. Heiman, MIT (United States)
S. Foner, MIT (United States)

Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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