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Proceedings Paper

Silicon-Germanium Superlattices
Author(s): G. Abstreiter; H. Brugger; K. Eberl; R. Zachai
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Paper Abstract

Growth and properties of Si/Ge and Si/SixGe1-x strained layer superlattices are reviewed. The critical thickness of single layers and asymmetrically strained superlattices are determined by LEED and Raman spectroscopy. The importance of strain symmetrization is discussed. Built-in strains are determined by phonon Raman scattering. The effects of strain on the band structure are analysed theoretically. Transport measurements in selectively doped samples lead, in connection with self-consistent subband calculations, to a consistent picture of band ordering. In short period superlattices a quasi-direct band gap semiconductor can be achieved. Zone-folding effects are also observed in the phonon properties of such superlattices. They are discussed both for the acoustical and optical branches.

Paper Details

Date Published: 11 August 1987
PDF: 9 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940823
Show Author Affiliations
G. Abstreiter, Technische Universitat Munchen (Federal Republic of Germany)
H. Brugger, Technische Universitat Munchen (Federal Republic of Germany)
K. Eberl, Technische Universitat Munchen (Federal Republic of Germany)
R. Zachai, Technische Universitat Munchen (Federal Republic of Germany)


Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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