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Proceedings Paper

Acceptor Impurity States And Their Consequences For Optical Properties Of GaAs Doping Superlattices
Author(s): John D. Bruno; P. Paul Ruden
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Paper Abstract

In this paper, we examine two features of acceptor states in GaAs doping superlattices. First, we consider how the finite size of acceptor state wavefunctions affects optical matrix elements and below-gap luminescence spectra. Next, we examine the finite width of the acceptor band caused by potential fluctuations associated with the random configuration of charged impurities in the system and discuss the impact of this width on luminescence.

Paper Details

Date Published: 11 August 1987
PDF: 9 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940820
Show Author Affiliations
John D. Bruno, Harry Diamond Laboratories (United States)
P. Paul Ruden, Honeywell Physical Sciences Center (United States)


Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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