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Proceedings Paper

Tunable Electroabsorption And Electroluminescence In GaAs Doping Superlattices
Author(s): C. J. Chang-Hasnain; G. Hasnain; G. H. Dohler; N. M. Johnson; J. N. Miller; J. R. Whinnery; A. Dienes
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Paper Abstract

Tunability of the optical absorption spectrum with electrical bias in GaAs doping super-lattices (n-i-p-i crystals) is demonstrated by both photoconductivity and direct transmis-sion measurements. A linear change of transmission of up to 22% is achieved at 0.89 μm wavelength through a 2.1 μm thick n-i-p-i crystal by varying the p-n junction bias between -2.0 V and 0.6 V. Highly tunable and efficient electroluminescence is also observed in strongly doped n-i-p-i crystals at room temperature with peak energies shifted more than 600 meV below the bulk bandgap (λ > 1.55 μm).

Paper Details

Date Published: 11 August 1987
PDF: 5 pages
Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940819
Show Author Affiliations
C. J. Chang-Hasnain, University of California (United States)
G. Hasnain, University of California (United States)
G. H. Dohler, Universitaet Erlangen (Germany)
N. M. Johnson, Xerox Research Center (United States)
J. N. Miller, Hewlett Packard Laboratories (United States)
J. R. Whinnery, University of California (United States)
A. Dienes, University of California (United States)

Published in SPIE Proceedings Vol. 0792:
Quantum Well and Superlattice Physics
Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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