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Proceedings Paper

High-mobility ambipolar polymer transistors: properties and function
Author(s): A. J. Kronemeijer; E. Gili; M. Shahid; J. Rivnay; A. Salleo; M. Heeney; H. Sirringhaus
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Paper Abstract

We have fabricated high-mobility ambipolar polymer transistors and have integrated multiple transistors to demonstrate their implementation into CMOS-like logic circuitry. The performance of a selenophene-based polymer semiconductor PSeDPPBT is initially screened using standard long-channel field-effect transistors. The polymer exhibits high and balanced hole and electron mobilities of ∼ 0.5 cm2/Vs and ∼ 1.0 cm2/Vs, respectively. Next, exploiting the beneficial electronic properties of PSeDPPBT, we have fabricated ambipolar inverters, ring oscillators and logic NOR gates. Ambipolar inverters are shown to exhibit voltage inversion with proper noise margins and no voltage loss over multiple stages. The potential speed of ambipolar logic is demonstrated by the realization of ambipolar ring oscillators with unprecedented performance. The feasibility to perform logic operations is demonstrated by the fabrication of ambipolar NOR gates. The combined results, (i) no loss in voltage over multiple inverters, (ii) the unprecedented speed, and (iii) the accomplishment of a functionally complete logic operation, demonstrate the feasibility of ambipolar logic as a reliable substitute for complementary-based logic in order to realize cost-efficient electronics.

Paper Details

Date Published: 11 October 2012
PDF: 8 pages
Proc. SPIE 8478, Organic Field-Effect Transistors XI, 847809 (11 October 2012); doi: 10.1117/12.940782
Show Author Affiliations
A. J. Kronemeijer, Univ. of Cambridge (United Kingdom)
E. Gili, Univ. of Cambridge (United Kingdom)
M. Shahid, Imperial College London (United Kingdom)
J. Rivnay, Stanford Univ. (United States)
A. Salleo, Stanford Univ. (United States)
M. Heeney, Imperial College London (United Kingdom)
H. Sirringhaus, Univ. of Cambridge (United Kingdom)


Published in SPIE Proceedings Vol. 8478:
Organic Field-Effect Transistors XI
Zhenan Bao; Iain McCulloch, Editor(s)

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