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Proceedings Paper

Planar GaAs Detector-Amplifier Circuits
Author(s): Gordon Wood Anderson; Nicolas A Papanicolaou; David I Ma; Ingham A.G Mack; Joh n A Modolo; Francis J Kub; Charles W Young; Phillip E Thompson; John B Boos
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Paper Abstract

Monolithic GaAs detector-amplifier channels and arrays have been fabricated for use in the 0.81 - 0.85 pm wavelength range. The circuits were fabricated using a multilayered GaAs/AlGaAs/GaAs structure grown on semi-insulating GaAs. The AlGaAs layer provided electrical isolation between the upper MESFET layer and the lower n- photoconductor layer. Typical rise times of discrete photoconductors in response to 0.84 μm wavelength optical exci-tation were in the range of 1.5 - 4 ns. Rise and fall times of integrated detector-amplifier single channel circuits of 9 ns and 28 ns, respectively, were observed in response to 0.84 pm optical excitation.

Paper Details

Date Published: 9 November 1987
PDF: 6 pages
Proc. SPIE 0789, Optical Technology for Microwave Applications III, (9 November 1987); doi: 10.1117/12.940734
Show Author Affiliations
Gordon Wood Anderson, Naval Research Laboratory (United States)
Nicolas A Papanicolaou, Naval Research Laboratory (United States)
David I Ma, Naval Research Laboratory (United States)
Ingham A.G Mack, Naval Research Laboratory (United States)
Joh n A Modolo, Naval Research Laboratory (United States)
Francis J Kub, Naval Research Laboratory (United States)
Charles W Young, Naval Research Laboratory (United States)
Phillip E Thompson, Naval Research Laboratory (United States)
John B Boos, Naval Research Laboratory (United States)


Published in SPIE Proceedings Vol. 0789:
Optical Technology for Microwave Applications III
Shi-Kay Yao, Editor(s)

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