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Proceedings Paper

Statistical Characterization Of A Large PtSi Focal Plane Array
Author(s): James E. Murguia; William S. Ewing
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Paper Abstract

Schottky barrier diode charge coupled device infrared focal plane arrays exist with thousands of pixel elements. Fabrication of these large 2-D imagers is made possible by the simple design of the unit cell which can be repeated using modern CAD equipment as well as the maturity of the -2μm silicon process. Large 2-D imagers of the kind will invariably have different characteristics than their 1-D (-500 pixel element) scanning counterparts. The quantity of pixels in the Schottky array makes their characterization on a one by one basis an intractable problem. Instead, statistics can be used to quantify the array performance on a global scale. The use of statistics simplifies the extraction of uniquely two dimensional imager characteristics and system parameters.

Paper Details

Date Published: 24 September 1987
PDF: 9 pages
Proc. SPIE 0782, Infrared Sensors and Sensor Fusion, (24 September 1987); doi: 10.1117/12.940566
Show Author Affiliations
James E. Murguia, Rome Air Development Center (United States)
William S. Ewing, Rome Air Development Center (United States)


Published in SPIE Proceedings Vol. 0782:
Infrared Sensors and Sensor Fusion
Rudolf G. Buser; Frank B. Warren, Editor(s)

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