Share Email Print
cover

Proceedings Paper

Plasma Etch Characterization Using Electrical Iinewidth Measuring Techniques
Author(s): Roger Patrick; Beth Arden
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The results of varying dry polysilicon etch process parameters are presented. Techniques used to study and interpret the results are electrical linewidth measurement and thin film thickness measurement. Conclusions are drawn about the suitability of the process for specific design rule considerations, and the tolerance of the parameters involved.

Paper Details

Date Published: 17 April 1987
PDF: 8 pages
Proc. SPIE 0775, Integrated Circuit Metrology, Inspection, & Process Control, (17 April 1987); doi: 10.1117/12.940430
Show Author Affiliations
Roger Patrick, LSI Logic Corporation (United States)
Beth Arden, Prometrix Corporation (United States)


Published in SPIE Proceedings Vol. 0775:
Integrated Circuit Metrology, Inspection, & Process Control
Kevin M. Monahan, Editor(s)

© SPIE. Terms of Use
Back to Top