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Proceedings Paper

Noise Contributions To Feature Dimension Measurement In A Scanning Electron Microscope (Sem)
Author(s): Jon R. Pearce; Duane C. Holmes
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Paper Abstract

In the semiconductor field critical dimension (CD) measurement accuracies and repeat-abilities of 1% @ 3siqma are often required and supplied by instrument vendors. In a SEM the accuracy and repeatability of such measurements is related to the signal-to-noise (s/n) ratio of the signal carrying the topographical information of the feature. Noise sources associated with the irradiating beam, signal generation at the sample, signal collection and various signal processing techniques may have an effect on cd measurement statistics. Positional uncertainties of either the irradiating beam or the sample itself, will likewise contribute to c-d measurement uncertainties. This paper discusses the effects and require-ments of some of these noise sources - especially in the signal-intensity chain.

Paper Details

Date Published: 17 April 1987
PDF: 6 pages
Proc. SPIE 0775, Integrated Circuit Metrology, Inspection, & Process Control, (17 April 1987); doi: 10.1117/12.940422
Show Author Affiliations
Jon R. Pearce, Nanometrics, Inc. (United States)
Duane C. Holmes, Nanometrics, Inc. (United States)

Published in SPIE Proceedings Vol. 0775:
Integrated Circuit Metrology, Inspection, & Process Control
Kevin M. Monahan, Editor(s)

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