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Proceedings Paper

Laser Linking For Defect Avoidance And Customization
Author(s): J. I. Raffel
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Paper Abstract

A laser linking technology has been developed which allows the formation of connections after fabrication in order to circumvent defects for yield enhancement in wafer-scale silicon circuits. This technique also facilitates rapid-turnaround customization. A number of digital signal processing systems have now been implemented with applications to speech, radar and image processing. In order to expedite technology transfer a new link structure has been developed which can be fabricated using a standard MOS process and has been demonstrated using the MOSIS silicon foundry.

Paper Details

Date Published: 1 September 1987
PDF: 8 pages
Proc. SPIE 0774, Lasers in Microlithography, (1 September 1987); doi: 10.1117/12.940393
Show Author Affiliations
J. I. Raffel, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0774:
Lasers in Microlithography
John Samuel Batchelder; Daniel J. Ehrlich; Jeff Y. Tsao, Editor(s)

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