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Proceedings Paper

Submicron Optical Lithography Using A KrF Excimer Laser Projection Exposure System
Author(s): Makoto Nakase; Takashi Sato; Misako Nonaka; Iwao Higashikawa; Yasuhiro Horiike
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Paper Abstract

The potential of excimer laser lithography was studied by using a newly developed KrF excimer laser exposure system which employed an achromatic lens of 0.37 NA. As a result, a resolution limit of 0.3 μm was achieved by the use of PMGI resist on a tri-level structure. However, for the case of resist exposure on a bare Si wafer, the resist film remailed locally in layers along the nodes of the standing waves, and fine pattern could not be obtained. This phenomenon is called spotted development in this paper. The spotted development, which is due to strong standing waves within the resist film, was successfully solved by the use of new resist process technologies such as a bias exposure method and excimer laser image reversal process.

Paper Details

Date Published: 30 June 1987
PDF: 8 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940375
Show Author Affiliations
Makoto Nakase, Toshiba Corporation (Japan)
Takashi Sato, Toshiba Corporation (Japan)
Misako Nonaka, Toshiba Corporation (Japan)
Iwao Higashikawa, Toshiba Corporation (Japan)
Yasuhiro Horiike, Toshiba Corporation (Japan)

Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)

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