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Proceedings Paper

10 Nm Fabrication By Focused Ion Beam
Author(s): Shuji Fujiwara; Masanori Komuro; Nobufumi Atoda
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Paper Abstract

A novolac resin resist (ONPR-800) is exposed to 50 keV Ga focused ion beam (FIB) to create a fine line pattern by a self-development process. A dose dependence of the self-developed depth shows a rapid increase at some critical dose of about 3x10 -2 C/cm 2 . Furthermore, it is found out that the shape of the groove is considerably affected by the tensile force in the resist film. We can obtain grooves with the width of 40 nm and the aspect ratio of 40 by eliminating the stress. Gold line pattern of a 0.1 μm width is successfully produced by electroplating into the self-developed resist pattern.

Paper Details

Date Published: 30 June 1987
PDF: 6 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940371
Show Author Affiliations
Shuji Fujiwara, SANYO Electric Co., Ltd. (Japan)
Masanori Komuro, Electrotechnical Laboratory (Japan)
Nobufumi Atoda, Electrotechnical Laboratory (Japan)


Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)

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