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Proceedings Paper

Production Efficiency And Intensity Distribution Of Pd X-Ray Source For Lithography
Author(s): Masaki Yamabe; Yoshitaka Kitamura; Yasuo Furukawa; Takefumi Inagaki
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Paper Abstract

A technique to evaluate the X-ray intensity distribution on the wafer in an X-ray lithography system equipped with a conventional X-ray source with a Pd target was devised. A practical formula for the Pd L X-ray production efficiency, including parameters such as the incident electron beam energy, its incident angle, and the X-ray take-off angle was derived to develop a method of simulating the X-ray intensity distribution on the wafer. This simulation includes realistic factors such as the target shape, the profile and direction of the electron beam, and the X-ray absorption by the window and mask membrane. A good agreement between the calculated and the measured X-ray intensity distributions obtained in the application of this technique to a cone shaped target verified the usefulness of the technique in the design of Pd X-ray sources.

Paper Details

Date Published: 30 June 1987
PDF: 6 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940361
Show Author Affiliations
Masaki Yamabe, Fujitsu Laboratories Ltd. (Japan)
Yoshitaka Kitamura, Fujitsu Laboratories Ltd. (Japan)
Yasuo Furukawa, Fujitsu Laboratories Ltd. (Japan)
Takefumi Inagaki, Fujitsu Laboratories Ltd. (Japan)


Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)

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