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Proceedings Paper

An Improved Technique For 1/4 Micrometer Gate Length Gaas Mesfet Fabrication By Optical Lithography
Author(s): Brad D. Cantos; Ronald D. Remba
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Paper Abstract

This paper describes an innovative photolithographic method for the fabrication of 1/4 micrometer gates in gallium arsenide Metal-Semiconductor Field Effect Transistors (GaAs MESFETs). The method utilizes image reversal technology, in which negative polarity images are produced in positive diazide photoresists. This work describes improvements obtained using ammonia as the image reversal catalyst over work previously described which used imidazole [1]. The ammonia based image reversal process is characterized with respect to sensitivity to several process parameters and uniformity of the resultant linewidth. The linewidth uniformity attained using this process is + 0.03 micrometer over a 50 mm diameter wafer and is currently used to fabricate 1/4 micrometer gate MESFETs on gallium arsenide.

Paper Details

Date Published: 30 June 1987
PDF: 7 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940354
Show Author Affiliations
Brad D. Cantos, Watkins-JohnsonCompany (United States)
Ronald D. Remba, Watkins-Johnson Company (United States)

Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)

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