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Proceedings Paper

Status And Prospects Of Sic-Masks For Synchrotron Based X-Ray Lithography
Author(s): H. Luthje; B. Matthiessen; M. Harms; A. Bruns
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Paper Abstract

This paper deals with the development of an X-ray stepper mask technology based on a rigid SiC.-membrane and a stress compensated W-absorber system. The SiC-mask blanks are being fabricated using batch processes like CVD-deposition and selective thin etching. As a result of extensive process optimization the polycristalline membranes can be fabricated with a smooth surface (< 40 nm) and a Young's modulus as high as the bulk value (4.6*10 11 N/m 2). Membranes of 2.7 μm in thickness are being prepared routinely with excellent transparency for synchrotron and optical radiation. For a high X-ray absorption and low thermal expansion sputter deposited tungsten has been applied. Ihe proposed stress compensating technique enables absorber stresses of less than 1*107 N/m , resulting in a mask distortion of < 100 nm. Precise sub-0.5-micron pattern with steep profiles have been generated by use of e-beam lithography and RIE techniques. High doses SOR experiments indicate an excellent long-term stability of SiC-W-masks.

Paper Details

Date Published: 30 June 1987
PDF: 8 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940348
Show Author Affiliations
H. Luthje, Philips GmbH Forschungslaboratorium Hamburg (FRG)
B. Matthiessen, Philips GmbH Forschungslaboratorium Hamburg (FRG)
M. Harms, Philips GmbH Forschungslaboratorium Hamburg (FRG)
A. Bruns, Philips GmbH Forschungslaboratorium Hamburg (FRG)


Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)

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