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Proceedings Paper

A New Mask-To-Wafer Alignment Technique For Synchrotron Radiation X-Ray Lithography
Author(s): Junji Itoh; Toshihiko Kanayama; Nobufumi Atoda; Koichiro Hoh
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Paper Abstract

A new interferometric optical-heterodyne method has been developed for detection of displacement between a mask and a wafer. This method uses three symmetrically-arranged gratings and detects the displacement from the phases of beat signals. Using a 0.76-μm-period-grating system and a He-Ne transverse-mode Zeeman laser( wave length = 0.6328 μm ), sensitivity better than 1° /0.01 μm was obtained and displacement smaller than 5nm was detected independently of the mask-wafer gap variations. With this method, a prototype alignment system having vertical mask and wafer stages was constructed for synchrotron x-ray lithography. The alignment accuracy better than 0.01 μm was achieved. Effects of several factors ( dimension of grating, resist coating, etc. ) influencing the alignment accuracy are discussed.

Paper Details

Date Published: 30 June 1987
PDF: 8 pages
Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940347
Show Author Affiliations
Junji Itoh, Electrotechnical Laboratory (Japan)
Toshihiko Kanayama, Electrotechnical Laboratory (Japan)
Nobufumi Atoda, Electrotechnical Laboratory (Japan)
Koichiro Hoh, Electrotechnical Laboratory (Japan)


Published in SPIE Proceedings Vol. 0773:
Electron-Beam, X-Ray, and Ion-Beam Lithographies VI
Phillip D. Blais, Editor(s)

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