Share Email Print
cover

Proceedings Paper

High Resolution Positive Photoresist For Submicron Photolithography
Author(s): Hidekatsu Kohara; Hatsuyuki Tanaka; Masanori Miyabe; Yoshiaki Arai; Shingo Asaumi; Toshimasa Nakayama
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Optical lithography is achieving itself into submicron region. In the limitation of resolution for stepper there is a decrease in contrast and so it requires more exposure amount than that of D. Also it is not possible to achieve faithful transcription of fine pattern dimension. The resolution of TSMR-8800 which is developed as high resolution positive photoresist is 0.6 μm. Faithful transcription of the mask pattern is possible for 0.7 μm line and space pattern. It shows good properties compared with conventional photoresist.

Paper Details

Date Published: 25 August 1987
PDF: 6 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940344
Show Author Affiliations
Hidekatsu Kohara, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hatsuyuki Tanaka, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Masanori Miyabe, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Yoshiaki Arai, Tokyo Olika Kogyo Co., Ltd. (Japan)
Shingo Asaumi, Tokyo Olika Kogyo Co., Ltd. (Japan)
Toshimasa Nakayama, Tokyo Olika Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)

© SPIE. Terms of Use
Back to Top