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Proceedings Paper

Negative-Acting Aqueous Base-Developable Photoresist With Submicron Resolution Capabilities Over Topography
Author(s): John J. Grunwald; William F. Cordes; Giora Ben-Shushan; Chava Gal; Kathy Harding; Allen C. Spencer; Eitan Shalom
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Paper Abstract

A family of negative-acting "image reversal" photoresists identified as the MacDermid XNR 2000 series is characterized here in some detail. Although its photoresist chemistry is based on the conventional positive resist concept using cresol Novolak resins together with a somewhat novel 2-1-4 naphthoquinone-diazo-oxide-ester, the conversion of the resist to the negative mode is primarily based on the addition of a new generation of thermal crosslinking agents to a typical positive resist formulation. The processing cycle evolved for this series consists of: (a) spin-coat, (b) soft-bake, (c) UV expose,(d) post-exposure-bake (PEB), and then (e) develop with either metal-ion containing or metal-ion-free developer(s) in either immersion or in-line mode(s).

Paper Details

Date Published: 25 August 1987
PDF: 14 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940340
Show Author Affiliations
John J. Grunwald, MacDermid Incorporated (United States)
William F. Cordes, MacDermid Incorporated (United States)
Giora Ben-Shushan, MacDermid Incorporated (United States)
Chava Gal, MacDermid Incorporated, (United States)
Kathy Harding, MacDermid Incorporated (United States)
Allen C. Spencer, MacDermid Incorporated (United States)
Eitan Shalom, MacDermid Incorporated (United States)


Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)

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