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Proceedings Paper

Optimized Tri-Layer Resist Technique For Volume Production
Author(s): E. Kawamura; J. Konno; K. Inayoshi; T. Takada
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Paper Abstract

Tri-layer resist technique has been developed for volume production of VLIs to achieve 0.8 μm line and space pattern using an NA 0.35 stepper. The 0.8 μm feature process was done mostly by optimizing normality of developer for top-layer resist. Patterned resolution dep-ends strongly on normality of the developer. The lower normality gives much wider latitude to CD control. Possibility of application of tri-layer resist process whose structure consists of top-layer resist, middle-layer silicone resine, and underlayer resist was examined.

Paper Details

Date Published: 25 August 1987
PDF: 3 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940339
Show Author Affiliations
E. Kawamura, Fujitsu Ltd. (Japan)
J. Konno, Fujitsu Ltd. (Japan)
K. Inayoshi, Fujitsu Ltd. (Japan)
T. Takada, Fujitsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)

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