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Proceedings Paper

Computer Simulation Of The Percolational Development And Pattern Formation In Pulsed Laser Exposed Positive Photoresists
Author(s): A. L. Bogdanov; A. A. Polyakov; K. A. Valiev; L. V. Velikov; D. Yu. Zaroslov
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Paper Abstract

The exposure of positive photoresists like AZ-2400 and AZ-2415 with pulsed excimer XeCl laser (λ= 308 nm) results in a thresholdlike growth of sensitivity and contrast of the resists [1]. The effect appears when pulse energy density W is in interval 3.106 - 5.106W/cm2, which is little lower than the ablation threshold of the resists - W = 5.10 W/cm2. We called exposure in this interval of W as preablation mode of exposure.

Paper Details

Date Published: 25 August 1987
PDF: 7 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940322
Show Author Affiliations
A. L. Bogdanov, Academy of Sciences of the USSR (Germany)
A. A. Polyakov, Academy of Sciences of the USSR (Germany)
K. A. Valiev, Academy of Sciences of the USSR (Germany)
L. V. Velikov, Academy of Sciences of the USSR (Germany)
D. Yu. Zaroslov, Academy of Sciences of the USSR (Germany)


Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)

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