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Proceedings Paper

Langmuir-Blodgett Films For Half Micron Lithography Using Krf Excimer Laser And X-Ray
Author(s): K. Ogawa; H. Tamura; M. Sasago; T. Ishihara
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Paper Abstract

For photo-resist in the semiconductor photo-lithography, the study was extended to five LB-Films for KrF Excimer (EX) Laser, i.e. three fatty acids of Diacetylene derivatives (Diynoic acids), w-Tricocynoic acid, and Octadecylacrylic acid, and other three LB-Films for X-ray, i.e. Arachidic acid, w-Tricosenoic acid, and w-Tricocynoic acid. In terms of the pattern shape and photo sensitivity, Pentscosa-diynoic acid for EX Laser and w-Tricocynoic acid for X-ray were better than others. Using Pentacosa-diynoic acid LB-Films, 0.3 pm pattern could be fabricated by the EX stepper, the size of which is the theoretical resolution limit of our lens. On the other hand, using w-Tricocynoic acid, 0.4 pm pattern could be fabricated by the X-ray stepper, of which size is at the limitation of X-ray mask which could be fabricated at present. But, if the smaller patterns of X-ray mask could be fabricated, it will be possible to make them below 0.1 μm. So these technology will become useful surely for the fabrication of 64Mbit D-RAMs.

Paper Details

Date Published: 25 August 1987
PDF: 7 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940306
Show Author Affiliations
K. Ogawa, Matsushita Electric Ind. Co., Ltd. (Japan)
H. Tamura, Matsushita Electric Ind. Co., Ltd. (Japan)
M. Sasago, Matsushita Electric Ind. Co., Ltd. (Japan)
T. Ishihara, Matsushita Electric Ind. Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)

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