Share Email Print

Proceedings Paper

Characteri Zation Cf A New Organ 3 Silicon Phcficiresist
Author(s): Wells C. Cunningham
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

For a number of years, there has lo'ep. great interest in organometallic based photoresists for use as the top layer in multilevel resist schemes.-' In general, bilevel approaches to lithography are forced upon the industry as a means of planarizing topography for a subsequent patterning step. This pattern is initially defined by exposure and development of a thin top layer (0.3 to 0.5μm) over the thicker bottom layer (1.0 to 2.0μm). (See Figure 1). In a conventional bilevel approach, the chosen bottom layer is photoactive at a wavelength for which the top is relatively opaque. The top level acts as a portable conformable mask (PCM) for image transfer through the bottom layer after its exposure and wet development. By using a silicon containing photoresist on the top image transfer may be accomplished using an oxygen plasma instead of a second exposure and development. The PCM in this case acts as an etch mask by forming a silicon dioxide crust in the plasma which slows the etch rate of the top versus the bottom layer. A generic curve of etch rate of a photoresist versus percent silicon by weight is shown in Figure 2. The shape is similar over a wide range of organosilicon polymers.5,6

Paper Details

Date Published: 25 August 1987
PDF: 7 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940305
Show Author Affiliations
Wells C. Cunningham, Shipley Company (United States)

Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)

© SPIE. Terms of Use
Back to Top