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Proceedings Paper

Brominated Poly(1-Trimethylsilylpropyne): A Sensitive Deep-Uv Resist For Two-Layer Lithography
Author(s): Antoni S. Gozdz; Gregory L. Baker; Cynthia Klausner; Murrae J. Bowden
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Paper Abstract

Brominated poly(1-trimethylsilylpropyne) (PTMSP-Br) is a sensitive, positive DUV resist suitable for application in a two-layer lithographic process. It is readily degraded in the presence of oxygen by DUV radiation (λ<280 nm), has excellent film formingproperties and is stable in air up to ~200°C. The sensitivity of PTMSP-Br is dependent on the degree of bromination and time and temperature of post-exposure baking. Samples having xB, from 0.1 to 0.2 per monomer unit and post-exposure baked for 1 h at 140°C exhibit sensitivities (Dr) of 20 to 25 mJ/cm2 with a contrast (γ) of 3.5-4.0. Half-µm lines and spaces have been generated by contact printing at 260 nm using 1-butanol as a developer and transferred into 1.5-2.5 µm-thick planarizing layers by anisotropic reactive ion etching. The etching rate ratio of PTMSP-Br vs. a hard-baked Novolac-type photoresist is better than 1:25.

Paper Details

Date Published: 25 August 1987
PDF: 6 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940303
Show Author Affiliations
Antoni S. Gozdz, Bell Communications Research (United States)
Gregory L. Baker, Bell Communications Research (United States)
Cynthia Klausner, Bell Communications Research (United States)
Murrae J. Bowden, Bell Communications Research (United States)


Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)

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