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Proceedings Paper

A Novel, Diazonium-Phenolic Resin Two-Layer Resist System Utilizing Photoinduced Interfacial Insolubilization
Author(s): Shou-ichi Uchino; Takao Iwayanagi; Takumi Ueno; Michiaki Hashimoto; Saburo Nonogaki
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Paper Abstract

This paper deals with a negative two-layer photoresist system utilizing a photoinduced insolubilization process at the interface. The bottom layer is a phenolic resin either with or without aromatic azide and the top layer is a photosensitive layer comprised of an aromatic diazonium compound and a water soluble polymer. Upon exposure to light, the diazo compound decomposes to cause insolubilization at the interface between the two layers. The system exhibits high contrast due to the combination of interfacial insolubilization and contrast enhancement by photobleaching of the diazonium compound. Patterns of 0.5 um lines and spaces are obtained using an i-line stepper and a resist system containing 4-diazo-N,N-dimethylaniline chloride zinc chloride in the top layer and 3-(4-azidostyry1)- 5,5-dimethyl- 2-cyclohexen-1-one in the bottom layer. Resists with varying spectral responses from mid-UV to g-line can be designed by selecting the kind of diazo compound used in the top layer.

Paper Details

Date Published: 25 August 1987
PDF: 7 pages
Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940302
Show Author Affiliations
Shou-ichi Uchino, Hitachi, Ltd. (Japan)
Takao Iwayanagi, Hitachi, Ltd. (Japan)
Takumi Ueno, Hitachi, Ltd. (Japan)
Michiaki Hashimoto, Hitachi, Ltd. (Japan)
Saburo Nonogaki, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 0771:
Advances in Resist Technology and Processing IV
Murrae J. Bowden, Editor(s)

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