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Proceedings Paper

A Channel Stop Defined, Barrier And Drain Antiblooming Structure For Virtual Phase Ccd Image Sensors
Author(s): W. F. Keenan; H. H. Hosack
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Paper Abstract

A new barrier and drain antiblooming architecture has been developed for virtual phase CCD image sensors. In this structure the drain is isolated from the pixel wells by the channel stop implant except in the antiblooming control region, where it is the same as the normal pixel barrier which exists along the direction of charge transfer. In addition, in this structure the drain is placed beneath the virtual electrode to eliminate low voltage breakdown effects. The unique organization of this structure allows the same potential levels to be used in both the antiblooming barrier and the transfer barrier. This multiple use of the same potential region greatly simplifies the processing needed for this type of device. The structure is formed by the process steps normally used to fabricate the sensor without antiblooming, except for one additional ion implant and pattern level to form the antiblooming drain. The antibooming action is continuous during integration and readout, and has extremely high overload tolerance. These features make this structure the preferred form of antiblooming for applications which have very high overload, such as flash lamp illumination. The process economy inherent in this anti-blooming structure results in higher sensor yields and lower manufacturing costs.

Paper Details

Date Published: 1 April 1987
PDF: 7 pages
Proc. SPIE 0765, Imaging Sensors and Displays, (1 April 1987); doi: 10.1117/12.940185
Show Author Affiliations
W. F. Keenan, Texas Instruments Incorporated (United States)
H. H. Hosack, Texas Instruments Incorporated (United States)


Published in SPIE Proceedings Vol. 0765:
Imaging Sensors and Displays
Charles Freeman, Editor(s)

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