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Proceedings Paper

A Simplified Analytic Model For Double Injection In Amorphous Silicon Alloys
Author(s): M. Silver; E. Snow; V. Cannella; J. McGill; Z. Yaniv; David Adler
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Paper Abstract

A simplified analytical model that describes the forward-bias current flow in recombination-limited p/i/n structures is described and applied to amorphous silicon alloys. The results obtained from this model reproduce those from more exact computer simulations. The analytic solution, however, elucidates the general form of the dependence of the current upon such parameters as the density of states and the recombination kinetics. We show that the current depends primarily on the ratio of the free-carrier mobilities to the recombination and trapping rate constants and on the energy dependence of the density of states.

Paper Details

Date Published: 21 August 1987
PDF: 6 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940170
Show Author Affiliations
M. Silver, University of North Carolina (United States)
E. Snow, University of North Carolina (United States)
V. Cannella, Ovonic Display Systems (United States)
J. McGill, Ovonic Display Systems (United States)
Z. Yaniv, Ovonic Display Systems (United States)
David Adler, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

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