Share Email Print

Proceedings Paper

Submicron Device Physics For Numerical Simulations
Author(s): Herbert S. Bennett
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Recent advances in physics for submicron, bipolar-crystalline devices suggest principles that are valid when modeling bipolar devices with noncrystalline regions such as those with polysilicon, polycrystalline silicon, and hydrogenated amorphous silicon emitters. These principles from crystalline device physics are summarized, and their implications for the noncrystalline regions of bipolar devices are given.

Paper Details

Date Published: 21 August 1987
PDF: 7 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940169
Show Author Affiliations
Herbert S. Bennett, National Bureau of Standards (United States)

Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

© SPIE. Terms of Use
Back to Top