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Proceedings Paper

Numerical Modeling Of Thin Film Si:H Solar Cells
Author(s): R. J. Schwartz; G. B. Turner; J. W. Park; J. L. Gray
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Paper Abstract

A detailed numerical model incorporating exponential tail states and Gaussian-distributed dangling bond states and doping states in the gap is used to compute the performance characteristics of thin film Si:H solar cells. A one-to-one relationship between four-fold coordinated doping atoms and dangling bonds is included. A good match to experiment occurs if the front contact is treated as non-ohmic (i.e. with a non-infinite surface recombination velocity) and a critical capture cross section is taken much smaller than expected. The numerical model is also used to compute the dependence of dark conductivity on doping, which exhibits saturation at high doping levels as observed.

Paper Details

Date Published: 21 August 1987
PDF: 8 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940168
Show Author Affiliations
R. J. Schwartz, Purdue University (United States)
G. B. Turner, ARCO Solar, Inc (United States)
J. W. Park, Purdue University (United States)
J. L. Gray, Purdue University (United States)


Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

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