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Proceedings Paper

A-Si:H Device Characterization Using Transient Response Measurements
Author(s): Rolf Konenkamp
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Paper Abstract

Several time-resolved experimental techniques have been applied to a-Si:H based thin films and diodes to determine carrier ranges, junction field profiles and charge storaae times. The results on p-i-n type diodes are compared to a theoretical model of a-Si:H so-lar cells. Electrochemical surface treatment of Schottky-barrier type devices indicates that improved carrier transport is obtained for interfaces from which oxide related defects are removed. For the case of thin a-SiC:H alloy films it is shown that deep trapping gives rise to significant space charge build-up which can be used for charge storage applications.

Paper Details

Date Published: 21 August 1987
PDF: 5 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940163
Show Author Affiliations
Rolf Konenkamp, Hahn-Meitner-Institut Berlin (Federal Republic of Germany)

Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

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