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Proceedings Paper

Influence Of Density Of States Distribution And Trapping Rates On The Transient Response In Amorphous Semiconductors
Author(s): G. J. Adriaenssens; G. Seynhaeve; H. Michiel
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Paper Abstract

A discrete version of the multiple trapping transport model for amorphous semiconductors is presented and its application to transient photocurrents demonstrated. The relationship between the average energy of a thermalizing carrier distribution and the demarcation energy of the TROK formalism is discussed in connection with structured density of states distributions. A novel way to calculate the transit time in a time-of-flight simulation is introduced and subsequently used to examine drift mobilities for various a-Si:H inspired density of states models.

Paper Details

Date Published: 21 August 1987
PDF: 9 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940162
Show Author Affiliations
G. J. Adriaenssens, Laboratorium voor Vaste-Stof en Hoge-Drukfysika (Belgium)
G. Seynhaeve, Laboratorium voor Vaste-Stof en Hoge-Drukfysika (Belgium)
H. Michiel, Interuniversitair Micro-Electronica Centrum v.z.w. (Belgium)


Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

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