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Proceedings Paper

Light And Electron Irradiation Effects In Sputtered A-Si:H
Author(s): S. Gangopadhyay; B. Schroder; J. Geiger
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Paper Abstract

We have studied the effect of light and electron irradiation on the density of states (DOS) of intrinsic a-Si:H films prepared by magnetron sputtering. The DOS of the films prepared under optimum conditions was obtained by space-charge-limited current method. The generation of metastable defects by light soaking and KeV electron irradiation has been directly observed by the change in the DOS. The defect creation by electrons is a factor of 3300 higher than that of light for the same deposition energy. Also the generation process is found to be different.

Paper Details

Date Published: 21 August 1987
PDF: 6 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940160
Show Author Affiliations
S. Gangopadhyay, Texas Tech University (United States)
B. Schroder, Universitat Kaiserslautern (West Germany)
J. Geiger, Universitat Kaiserslautern (West Germany)


Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

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