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Proceedings Paper

The Distribution Of Deep States In Hydrogenated Amorphous Silicon
Author(s): Eric Snow
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Paper Abstract

The distribution of deep states in undoped a-Si:H is investigated. For this purpose, a new experimental technique is introduced which is based on the principle of thermally-stimulated space-charge relaxation. A peak in the density of states is resolved at - 0.6 eV below the mobility edge of the conduction band. The energy position and magnitude of this peak are found to be consistent with space-charge-limited current measurements.

Paper Details

Date Published: 21 August 1987
PDF: 5 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940158
Show Author Affiliations
Eric Snow, Naval Research Laboratory (United States)


Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

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