Share Email Print
cover

Proceedings Paper

Transient Photocurrent Characterization Of Amorphous Semiconductors
Author(s): E. A. Schiff
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Transient photocurrent techniques for the characterization of amorphous semiconductors are reviewed; the techniques are based on the assumption that the photocarrier dynamics have the multiple-trapping form. The application of these techniques to five properties of defects in amorphous hydrogenated silicon (a-Si:H) are reviewed. The five properties are: the attempt-to-escape frequency, the photocarrier diffusion length, the total trap density, the capture coefficient-diffusion constant ratio, and the density of states. A discussion of the role of time-of-flight determinations in transient photocurrent characterization is given.

Paper Details

Date Published: 21 August 1987
PDF: 8 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940157
Show Author Affiliations
E. A. Schiff, Syracuse University (United States)


Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

© SPIE. Terms of Use
Back to Top