Share Email Print
cover

Proceedings Paper

Experimental Study Of Sweep-Out In Hydrogenated Amorphous Silicon
Author(s): Le Xu; George Winborne; Marvin Silver; Howard M . Brant; David Adler
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We present experimental results on the transient response of i/n/i hydrogenated amorphous silicon (a-Si:H) structures as a function of voltage. Comparison with M/i/n devices and results from a novel double-pulse experiment show that the transient current is initially space-charge limited and later limited by emission from deep states in the injecting n layer. Theoretical analysis of these results suggests the existence of a peak in the density of states of As-doped a-Si:H located within 0.3 eV of the conduction-band mobility edge.

Paper Details

Date Published: 21 August 1987
PDF: 5 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940156
Show Author Affiliations
Le Xu, University of North Carolina (United States)
George Winborne, University of North Carolina (United States)
Marvin Silver, University of North Carolina (United States)
Howard M . Brant, Massachusetts Institute of Technology (United States)
David Adler, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

© SPIE. Terms of Use
Back to Top