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Proceedings Paper

Experimental Study Of Sweep-Out In Hydrogenated Amorphous Silicon
Author(s): Le Xu; George Winborne; Marvin Silver; Howard M . Brant; David Adler
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Paper Abstract

We present experimental results on the transient response of i/n/i hydrogenated amorphous silicon (a-Si:H) structures as a function of voltage. Comparison with M/i/n devices and results from a novel double-pulse experiment show that the transient current is initially space-charge limited and later limited by emission from deep states in the injecting n layer. Theoretical analysis of these results suggests the existence of a peak in the density of states of As-doped a-Si:H located within 0.3 eV of the conduction-band mobility edge.

Paper Details

Date Published: 21 August 1987
PDF: 5 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940156
Show Author Affiliations
Le Xu, University of North Carolina (United States)
George Winborne, University of North Carolina (United States)
Marvin Silver, University of North Carolina (United States)
Howard M . Brant, Massachusetts Institute of Technology (United States)
David Adler, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

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