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Proceedings Paper

Esr And The Density Of Deep Gap States In A-Si:H
Author(s): P. C. Taylor; C. Lee; W. D. Ohlsen
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Paper Abstract

Electron spin resonance (ESR) is an important tool for providing detailed microscopic information about electronic states located within the energy gap in hydrogeated amorphous silicon (a-Si:H). There always exists an ESR signal in a-Si:H on the order of 1015 spins cm-3 which is attributed to silicon dangling bonds. After optical excitation with band-gap light, a metastable increase in the dangling bond ESR signal is observed. After rapid quenching of a sample from -200°C to room temperature, there is also an increase in the ESR signal with time (without optical excitation) as the sample approaches thermal equilibrium.

Paper Details

Date Published: 21 August 1987
PDF: 7 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940155
Show Author Affiliations
P. C. Taylor, University of Utah (United States)
C. Lee, University of Utah (United States)
W. D. Ohlsen, University of Utah (United States)

Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

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