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Proceedings Paper

The Density Of States In Hydrogenated Amorphous Silicon
Author(s): R. A. Street
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Paper Abstract

This paper reviews various experiments that give information about the density of states in hydrogenated amorphous silicon (a-Si:H). The data are used to construct the density of states distribution N(E), and its dependence on doping. The structural origin of the different groups of states is discussed, and it is also shown that N(E) depends on the thermal history of the samples.

Paper Details

Date Published: 21 August 1987
PDF: 7 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940153
Show Author Affiliations
R. A. Street, Xerox Palo Alto Research Center (United States)

Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

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