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Proceedings Paper

Density Of States Of Amorphous Semiconductors
Author(s): David Adler
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Paper Abstract

The problems of defining an electronic density of states for amorphous semiconductors are summarized. A new equilibrium statistical-mechanical model for the structure and electronic properties of disordered systems is discussed and applied to the case of hydrogenated amorphous silicon (a-Si:H). The difficulty in treating non-equilibrium effects is briefly analyzed, and some of the unresolved controversies with regard to the density of states in a-Si:H are enumerated.

Paper Details

Date Published: 21 August 1987
PDF: 8 pages
Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940152
Show Author Affiliations
David Adler, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0763:
Physics of Amorphous Semiconductor Devices
David Adler, Editor(s)

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