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Proceedings Paper

The Structure And Characteristics Of Laser Diodes For Optical Instruments
Author(s): Chen-Show Wang
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Paper Abstract

The first semiconductor lasers, based on simple p-n junctions formed in gallium arsenide, were demonstrated in 1962 [1]. It was not until 1970, however, that continuous oper-ation at room temperature could be demonstrated. This was achieved by using double hetero-junctions of GaAlAs and GaAs in which the carriers are confined in the potential well formed by sandwiching a thin, narrower energy-gap material between higher energy-gap n- and p-type materials [2,3]. Since then there has been worldwide extensive research and development efforts in improving the operation characteristics as well as the reliability of the laser diodes. For the past fifteen years the main driving force behind these efforts have been applications in optical communications. Some attractive features of using laser diodes as light sources in fiber optic communications include narrow emission linewidths, excellent directionality, and very high bandwidth of direct modulation. Such features enable good coupling efficiency into the transmitting medium and make laser diodes particularly attractive for long haul communication. Extensive research of the optical fiber in the late 70's revealed the 1.3 um and 1.55 um wavelength regions to be the regions of lowest loss for silica based fiber. Development of GaInAsP/InP laser diodes with these wave-lengths soon followed. At present, GaAlAs/GaAs laser diodes in the 0.83 um region and GaInAsP/InP laser diodes in the 1.3 um and 1.55 um regions are "mature" for fiber optics communications.

Paper Details

Date Published: 10 April 1987
PDF: 16 pages
Proc. SPIE 0741, Design of Optical Systems Incorporating Low Power Lasers, (10 April 1987); doi: 10.1117/12.939743
Show Author Affiliations
Chen-Show Wang, General Optronics Corp. (United States)


Published in SPIE Proceedings Vol. 0741:
Design of Optical Systems Incorporating Low Power Lasers
Donald C. O'Shea, Editor(s)

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