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Proceedings Paper

Growth Of Laser Crystals By Heat Exchanger Method (HEM)
Author(s): C P Khattak; A N Scoville
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Paper Abstract

The adaptation of the Heat Exchanger Method for the growth of high quality laser crystals, viz., Co:MgF2 and Ti:Al203, is discussed. In case of Co:MgF2 problems associated with dopant polarization and reaction with the crucible have been solved to produce 1 wt.% CoF2 crystals. For Ti:Al201 crystals 10 cm diameter boules have been grown. This material does not exhibit the 800 nm absorption and laser rods with uniform Ti concentration can be fabricated from these boules.

Paper Details

Date Published: 9 March 1987
PDF: 4 pages
Proc. SPIE 0681, Laser and Nonlinear Optical Materials, (9 March 1987); doi: 10.1117/12.939619
Show Author Affiliations
C P Khattak, Crystal Systems, Inc. (United States)
A N Scoville, Crystal Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 0681:
Laser and Nonlinear Optical Materials
Larry G. DeShazer, Editor(s)

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