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Proceedings Paper

Damage Resistance And Crystal Growth Of KDP
Author(s): John F Cooper; Mary F Singleton
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Paper Abstract

An investigation is reported of the dependence of laser-damage site density on fluence and on various parameters of crystal growth and post-growth treatment. Damage site density (number of defects per unit volume) was found to increase monotonically with fluence (for single 1-ns pulses of 1.06 μm laser light). Site density (at a fluence of 10 J/cm2) was influenced by solution flow rate, seed defect removal prior to growth, quaternary ammonium cations, and thermal cycling following growth. No dependence of damage susceptibility on growth rate was found over the range 3-30 mm/d. A model is presented which postulates the electrostatic adsorption cf organic material onto the growing crystal surface and subsequent inclusion into the crystal. According to the model, damage occurs by absorption of light by inclusions of solution-wetted organic debris, resulting in pressure increase and hydraulic fracture of the surrounding crystal.

Paper Details

Date Published: 9 March 1987
PDF: 4 pages
Proc. SPIE 0681, Laser and Nonlinear Optical Materials, (9 March 1987); doi: 10.1117/12.939610
Show Author Affiliations
John F Cooper, University of California (United States)
Mary F Singleton, University of California (United States)


Published in SPIE Proceedings Vol. 0681:
Laser and Nonlinear Optical Materials
Larry G. DeShazer, Editor(s)

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