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Proceedings Paper

Configurations For High Speed GaAs CCD Imagers
Author(s): P B Kosel; M R Wilson; J. T Boyd; L A King
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Paper Abstract

A process has been investigated for the fabrication of overlapping charge transfer electrode structures in charge-coupled devices on gallium arsenide with ion implanted active channels. The electrode metal was aluminum and the interelectrode isolation medium was anodically formed aluminum oxide. A CCD with ion implanted active channel is desirable since this form is most compatible with standard GaAs integrated circuit fabrication and the latter usually forms an important component of a monolithic CCD imager. For good dynamic range the channel noise must be kept to a minimum. Hence, for this purpose a computer model has been developed for simulating charge transfer through an implanted channel to aid in the design of the transfer electrode structure and the channel profile.

Paper Details

Date Published: 26 September 1984
PDF: 8 pages
Proc. SPIE 0460, Processing of Guided Wave Optoelectronic Materials I, (26 September 1984); doi: 10.1117/12.939460
Show Author Affiliations
P B Kosel, University of Cincinnati (United States)
M R Wilson, University of Cincinnati (United States)
J. T Boyd, University of Cincinnati (United States)
L A King, University of Cincinnati (United States)

Published in SPIE Proceedings Vol. 0460:
Processing of Guided Wave Optoelectronic Materials I
Robert L. Holman; Donald Morgan Smyth, Editor(s)

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