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Proceedings Paper

Guided Wave Device Design And Fabrication For Monolithic Integration In GaAs
Author(s): M A Mentzer; R G. Hunsperger; S. Sriram; J Bartko; J M Zavada; H. A Jenkinson
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Paper Abstract

Integrated optical circuits operating at wavelengths from 1 to 12 microns and fabricated monolithically on a GaAs substrate would have a tremendous impact on signal processing systems. These circuits would afford the ultimate merger of the VLSI electronics and integrated GaAs optoelectronics, as well as the monolithic integration of microwave electronic devices such as Gunn diodes and Schottky gate FET's with GaAs optical components.1 Such GaAs components include planar and channel waveguides, parallel channel directional couplers, electro-optic (EO) modulators and switches, laser diodes, acousto-optic modulators, and detectors.2 This paper focuses upon the design and fabrication by proton implantation of the necessary fundamental guided wave components in GaAs for operation at λo = 1.3, 3.4, and 10.6 μm wavelengths. The objective is to produce waveguide designs with less than 3 dB/cm optical propagation loss at each wavelength of interest. Specific range-energy curves for proton implantation in GaAs to produce the desired waveguide characteristics have also been developed.

Paper Details

Date Published: 26 September 1984
PDF: 6 pages
Proc. SPIE 0460, Processing of Guided Wave Optoelectronic Materials I, (26 September 1984); doi: 10.1117/12.939459
Show Author Affiliations
M A Mentzer, Westinghouse Electric Corporation (United States)
R G. Hunsperger, University of Delaware (United States)
S. Sriram, Westinghouse Electric Corporation (United States)
J Bartko, Westinghouse Electric Corporation (United States)
J M Zavada, United States Army (United States)
H. A Jenkinson, United States Army (United States)

Published in SPIE Proceedings Vol. 0460:
Processing of Guided Wave Optoelectronic Materials I
Robert L. Holman; Donald Morgan Smyth, Editor(s)

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