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Proceedings Paper

Processing And Performance Of Guided-Wave Devices In GaAs/AlGaAs
Author(s): Y R. Yuan; G Allen Vawter; Kazuo Eda; James L. Merz; Brian Kincaid
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Paper Abstract

A simple technique for the fabrication of integrated optical circuits on a GaAs substrate employing LPE epitaxial layer growth of AℓGaAs and GaAs and subsequent wet chemical etching to define the circuit structure is described. Several useful structures employing lasers, waveguides and detectors are discussed along with performance specifications that we have achieved in our laboratory. Finally, the correlation of waveguide loss to epitaxial layer uniformity is described.

Paper Details

Date Published: 26 September 1984
PDF: 5 pages
Proc. SPIE 0460, Processing of Guided Wave Optoelectronic Materials I, (26 September 1984); doi: 10.1117/12.939458
Show Author Affiliations
Y R. Yuan, University of California (United States)
G Allen Vawter, University of California (United States)
Kazuo Eda, University of California (United States)
James L. Merz, University of California (United States)
Brian Kincaid, Lockheed Missile & Space Co. Inc. (United States)

Published in SPIE Proceedings Vol. 0460:
Processing of Guided Wave Optoelectronic Materials I
Robert L. Holman; Donald Morgan Smyth, Editor(s)

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