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Proceedings Paper

Laser-Induced Etching Of Insulators Using A DC Glow Discharge In Silane
Author(s): J. M. Gee; P J Hargis
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Paper Abstract

We report a new method of laser-controlled etching in which the radiation from a pulsed-ultraviolet excimer laser is used to etch inorganic insulators exposed to plasma species that have been produced in a glow discharge sustained in silane. The maximum etch rate achieved was 50 nm/min for thin-film silicon dioxide.

Paper Details

Date Published: 14 June 1984
PDF: 6 pages
Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); doi: 10.1117/12.939448
Show Author Affiliations
J. M. Gee, Sandia National Laboratories (United States)
P J Hargis, Sandia National Laboratories (United States)


Published in SPIE Proceedings Vol. 0459:
Laser-Assisted Deposition, Etching, and Doping
Susan Davis Allen, Editor(s)

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